PART |
Description |
Maker |
MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB (MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
|
IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
MRF6522-70 MRF6522-70R306 MRF6522-70R3 |
RF Power Field Effect Transistor
|
http:// Freescale Semiconductor, Inc
|
MRF6S21050LR3 MRF6S21050LSR3 |
RF Power Field Effect Transistors
|
Freescale (Motorola) Freescale Semiconductor, Inc
|
MRF8S7120NR3 |
RF Power Field Effect Transistor
|
Motorola
|
MRF8S18260H MRF8S18260HSR6 MRF8S18260HR6 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
VN30ABA VN35ABA |
Field Effect Power Transistor
|
General Electric Solid State
|
MRF282 MRF282ZR1 MRF282SR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MTM15N20 MOTOROLAINC-MTM15N20 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|